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 Semiconductors & Microelectronics > XRD / XRR
X-ray Diffraction/ X-ray Reflectivity (XRD/XRR)

What is XRD / XRR?
X-ray Diffraction (XRD) is a powerful non-destructive technique for characterizing crystalline materials. It provides information on structures, phases, preferred crystal orientations (texture) and other structural parameters such as average grain size, crystallinity, strain and crystal defects. X-ray diffraction peaks are produced by constructive interference of monochromatic beam scattered from each set of lattice planes at specific angles. The peak intensities are determined by the atomic decoration within the lattice planes. Consequently, the X-ray diffraction pattern is the fingerprint of periodic atomic arrangements in a given material. An on-line search of a standard database for X-ray powder diffraction pattern enables quick phase identification for a large variety of crystalline samples.

Specular X-ray Reflectivity (XRR), a technique parallel to X-ray diffraction, is now becoming a widely used tool for the characterization of thin-film and multilayer structures. X-ray scattering at very small diffraction angles allows characterization of electron density profiles of thin film down to a few tens of angstroms. Using a simulation or the least-squared fit of the reflectivity pattern, one can obtain accurate measurements of thickness, interface roughness and layer density for either crystalline or amorphous thin films and multilayers.

XRD / XRR at Santa Clara
Our Philips X’Pert –MRD x-ray diffractometer is equipped with PREFIX optical modules that can be exchanged depending on the analysis requirement without affecting the accuracy of positioning. It is simple to switch between line and point focus of the x-ray tube, enabling simple switching from a regular XRD configuration to a High-resolution XRD configuration. Different combinations of PREFIX optical modules enable us to analyze powder samples, thin films, bulk polycrystalline samples exhibiting texture or stress, disks and ICs. An on-line search of the JCPDS database provides fast phase identification as well as qualitative measurements for texture, crystal mis-orientation and strain in specimens. Accurate sample alignment tools also enable highly reproducible data collection for thin-film diffraction and reflectivity measurements.

Main Applications
Determination of phase contents of reaction products
Measurement of average crystallite size, strain or micro-strain effects in bulk and thin-film samples.
Quantification of preferred orientation (texture) in thin films and multi-layers.
Refinement of lattice parameters.
Measurement of residue stress in blank film stack and patterned wafers.
Determination of thickness, interface roughness and density for thin films and multi-layers.

Specifications
Phase identification of a large variety of bulk and thin-film samples using JCPDS database, detection of crystalline minority phases of greater than ~1%.
Variable penetrating depth between thousandth to tens of microns depending on material properties and X-ray incidence angles, and adjustable probe area of centimeter square to millimeter square based on analysis needs.
Films as thin as 50 angstroms could be analyzed for texture and phase behaviors.
Measuring X-ray reflectivity of thin film (40-2000 Å) for thickness, interface roughness down to a few angstroms of resolution, and layer density within a few percent accuracy.
Measuring sub-milligram loose powder or dried solution samples for phase identification.

Advantages
  Completely non-destructive analysis.
  Quantitative measurement of phase contents and texture orientation.
  Minimal or no sample preparation requirements.
  Ambient conditions for all analysis.
Table of Figures:
(click thumbnail for
larger display)


XRD Figure 1


XRD Figure 2:

Powder X-ray Diffraction of AlF3·3H2O mineral. The vertical lines indicate the positions and peak intensities of the powder diffraction standard from JCPDS database


Figure 3:

X-ray Diffraction patterns of two Cu films that show complete (111) orientation normal to the surface (blue line), and both (111) and (200) orientations along the surface normal (red line).


Figure 4:

X-ray rocking curves for the two Cu films on the left that show uni-modal (blue line) and bimodal (red line) mosaic distributions of Cu (111)


AFM Figure 5:
X-ray Reflectivity interference fringes for a Ta2O5 film of 165 angstroms.
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